Toshiba Corporation announced yesterday the prototype of a new FeRAM (Ferroelectric Random Access Memory), a type of non-volatile computer memory that promises to redefine benchmarks density industries and operational speeds.
The new chip stores 128 megabits (16MB, four times more than before) with 1.6GB per second write and read speeds (the previous model worked at 200MB per second), the most advanced combination of performance and density ever achieved. in history.
According to the company, consumption levels from outside have also been modified, allowing it to work with the DDR2 interface, facilitating its integration with conventional devices. Toshiba expects the technology to be very useful on cell phones, handheld PCs and other devices that use non-volatile memories (data is not lost when turned off) and / or needs to be restarted quickly.
More details about the new FeRAM are due to be presented this week, during the International Solid-State Circuits Conference 2009 (ISSCC2009) in San Francisco, in the United States.
(Tip from Ronaldo Ribeiro, thank you!)